IRFL024ZTRPBF
ActiveSOT223Infineon Technologies · Transistors
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Technical Specifications
ManufacturerINFINEON TECHNOLOGIES
Type of transistorN-MOSFET
Polarisationunipolar
Power dissipation2.8W
Kind of packagereel
TechnologyHEXFET®
Drain current5.1A
Kind of channelenhancement
CaseSOT223
Drain-source voltage55V
MountingSMD
tariffCode85412900
Channel TypeN Channel
euEccnNLR
rohsCompliantYES
Product RangeHEXFET
hazardousfalse
rohsPhthalatesCompliantYES
Rds(on) Test Voltage10
Drain Source On State Resistance0.0575
Continuous Drain Current Id5.1
isCanonicalN
Operating Temperature Max150
Transistor MountingSurface Mount
MSLMSL 1 - Unlimited
Gate Source Threshold Voltage Max4
SVHCNo SVHC (25-Jun-2025)
Drain Source Voltage Vds55
Transistor Case StyleSOT-223
productTraceabilityYes-Date/Lot Code
No. of Pins3
usEccnEAR99
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