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IRF530NPBF

ActiveTO220AB

Infineon Technologies · Transistors

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Technical Specifications

ManufacturerINFINEON TECHNOLOGIES
MountingTHT
Polarisationunipolar
TechnologyHEXFET®
Kind of channelenhancement
Type of transistorN-MOSFET
Kind of packagetube
CaseTO220AB
On-state resistance90mΩ
Power dissipation79W
Gate charge24.7nC
Drain current17A
Drain-source voltage100V
Gate-source voltage±20V

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