IPB048N15N5ATMA1
ActivePG-TO 263-3Infineon Technologies · Transistors
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Technical Specifications
ManufacturerINFINEON TECHNOLOGIES
Type of transistorN-MOSFET
TechnologyOptiMOS™ 5
Polarisationunipolar
CasePG-TO 263-3
MountingSMD
Kind of channelenhancement
Drain current118A
Power dissipation300W
On-state resistance4.8mΩ
Pulsed drain current480A
Drain-source voltage150V
Gate-source voltage±20V
tariffCode85412900
Channel TypeN Channel
euEccnNLR
rohsCompliantYES
Product RangeOptiMOS 5
hazardousfalse
rohsPhthalatesCompliantYES
Rds(on) Test Voltage10
Drain Source On State Resistance4800
Continuous Drain Current Id120
isCanonicalY
Operating Temperature Max175
Transistor MountingSurface Mount
MSLMSL 1 - Unlimited
Gate Source Threshold Voltage Max3.8
SVHCNo SVHC (25-Jun-2025)
Drain Source Voltage Vds150
Transistor Case StyleTO-263 (D2PAK)
productTraceabilityYes-Date/Lot Code
No. of Pins3
usEccnEAR99
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