IRF3205ZPBF
ActiveTO220ABInfineon Technologies · Transistors
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Technical Specifications
ManufacturerINFINEON TECHNOLOGIES
MountingTHT
Polarisationunipolar
TechnologyHEXFET®
Kind of channelenhancement
Type of transistorN-MOSFET
Kind of packagetube
CaseTO220AB
Power dissipation170W
On-state resistance6.5mΩ
Gate charge110nC
Gate-source voltage±20V
Drain-source voltage55V
Drain current78A
tariffCode85412900
Channel TypeN Channel
euEccnNLR
rohsCompliantYES
hazardousfalse
rohsPhthalatesCompliantYES
Rds(on) Test Voltage10
Drain Source On State Resistance6500
Continuous Drain Current Id110
isCanonicalY
Operating Temperature Max175
Transistor MountingThrough Hole
Gate Source Threshold Voltage Max4
SVHCNo SVHC (25-Jun-2025)
Drain Source Voltage Vds55
Transistor Case StyleTO-220AB
productTraceabilityYes-Date/Lot Code
No. of Pins3
usEccnEAR99
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