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IRFB3207PBF

ActiveTO220AB

Infineon Technologies · Transistors

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Technical Specifications

ManufacturerINFINEON TECHNOLOGIES
MountingTHT
Polarisationunipolar
TechnologyHEXFET®
Kind of channelenhancement
Type of transistorN-MOSFET
Kind of packagetube
CaseTO220AB
Drain current120A
On-state resistance4.5mΩ
Gate-source voltage±20V
Drain-source voltage75V
Power dissipation330W
Gate charge180nC

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