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IRF7341TRPBF

ActiveSO8

Infineon Technologies · Transistors

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Technical Specifications

Power dissipation2W
ManufacturerINFINEON TECHNOLOGIES
MountingSMD
Polarisationunipolar
TechnologyHEXFET®
Kind of channelenhancement
Type of transistorN-MOSFET x2
Kind of packagereel
CaseSO8
Drain current3.8A
On-state resistance65mΩ
Gate-source voltage±20V
Drain-source voltage55V

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