IRF540NSTRRPBF
ActiveD2PAKInfineon Technologies · Transistors
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Technical Specifications
MountingSMD
Gate charge47.3nC
Polarisationunipolar
TechnologyHEXFET®
Drain current33A
Kind of channelenhancement
Drain-source voltage100V
Type of transistorN-MOSFET
Gate-source voltage±20V
CaseD2PAK
On-state resistance44mΩ
ManufacturerINFINEON TECHNOLOGIES
Power dissipation3.8W
tariffCode85412900
Channel TypeN Channel
euEccnNLR
rohsCompliantYES
hazardousfalse
rohsPhthalatesCompliantYES
Rds(on) Test Voltage10
Drain Source On State Resistance0.044
Continuous Drain Current Id33
isCanonicalY
Operating Temperature Max175
Transistor MountingSurface Mount
MSLMSL 1 - Unlimited
Gate Source Threshold Voltage Max4
SVHCNo SVHC (08-Jul-2021)
Drain Source Voltage Vds100
Transistor Case StyleTO-263 (D2PAK)
productTraceabilityYes-Date/Lot Code
No. of Pins3
usEccnEAR99
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