NTH4L040N120M3S
ActiveTO247-4onsemi · Transistors
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; Idm: 134A; 115W
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Technical Specifications
ManufacturerONSEMI
CaseTO247-4
MountingTHT
Pulsed drain current134A
Power dissipation115W
Gate charge75nC
Polarisationunipolar
TechnologySiC
Features of semiconductor devicesKelvin terminal
Drain current38A
Kind of channelenhancement
Drain-source voltage1.2kV
Type of transistorN-MOSFET
Gate-source voltage-10...22V
Kind of packagetube
On-state resistance80mΩ
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