NTBG060N065SC1
ActiveD2PAK-7onsemi · Transistors
Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W
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NTBG060N065SC1
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Technical Specifications
ManufacturerONSEMI
TechnologySiC
MountingSMD
CaseD2PAK-7
Kind of packagereel, tape
Pulsed drain current130A
Power dissipation85W
Gate charge74nC
Polarisationunipolar
Features of semiconductor devicesKelvin terminal
Drain current33A
Kind of channelenhancement
Drain-source voltage650V
Type of transistorN-MOSFET
Gate-source voltage-5...18V
On-state resistance50mΩ
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