NTH4L060N065SC1
ActiveTO247-4onsemi · Transistors
Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W
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Technical Specifications
ManufacturerONSEMI
TechnologySiC
MountingTHT
CaseTO247-4
Kind of packagetube
Pulsed drain current152A
Power dissipation88W
Gate charge74nC
Polarisationunipolar
Features of semiconductor devicesKelvin terminal
Drain current33A
Kind of channelenhancement
Drain-source voltage650V
Type of transistorN-MOSFET
Gate-source voltage-8...22V
On-state resistance50mΩ
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