NTH4L014N120M3P
ActiveTO247-4onsemi · Transistors
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 407A; 343W
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Technical Specifications
TechnologySiC
MountingTHT
CaseTO247-4
Kind of packagetube
Pulsed drain current407A
Power dissipation343W
Gate charge322nC
Polarisationunipolar
Features of semiconductor devicesKelvin terminal
Drain current107A
Kind of channelenhancement
Drain-source voltage1.2kV
Type of transistorN-MOSFET
Gate-source voltage-10...22V
On-state resistance29mΩ
ManufacturerONSEMI
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