NTH4L025N065SC1
ActiveTO247-4onsemi · Transistors
Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
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Technical Specifications
ManufacturerONSEMI
TechnologySiC
MountingTHT
CaseTO247-4
Kind of packagetube
Pulsed drain current323A
Power dissipation174W
Gate charge164nC
Polarisationunipolar
Features of semiconductor devicesKelvin terminal
Drain current70A
Kind of channelenhancement
Drain-source voltage650V
Type of transistorN-MOSFET
Gate-source voltage-5...18V
On-state resistance24mΩ
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