SI5935CDC-T1-GE3
ActiveChipFET8Vishay Siliconix · Transistors
Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4A; Idm: -10A
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Technical Specifications
ManufacturerVISHAY
MountingSMD
CaseChipFET8
Type of transistorP-MOSFET x2
Kind of packagereel, tape
Case - inch1206
Case - mm3216
Pulsed drain current-10A
Power dissipation2W
Gate charge11nC
On-state resistance156mΩ
Polarisationunipolar
TechnologyTrenchFET®
Kind of channelenhancement
Drain-source voltage-20V
Drain current-4A
Gate-source voltage±8V
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