SI1922EDH-T1-GE3
ActiveSC70-6, SOT363Vishay Siliconix · Transistors
Transistor: N-MOSFET; unipolar; 20V; 1.3A; Idm: 4A; 0.8W; ESD
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SI1922EDH-T1-GE3
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Technical Specifications
Gate-source voltage±8V
ManufacturerVISHAY
Type of transistorN-MOSFET
Polarisationunipolar
CaseSC70-6, SOT363
MountingSMD
Kind of packagereel, tape
Kind of channelenhancement
VersionESD
Drain-source voltage20V
Power dissipation0.8W
Gate charge2.5nC
On-state resistance198mΩ
Drain current1.3A
Pulsed drain current4A
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