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STP55NF06

ActiveTO220-3

STMicroelectronics · Transistors

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Technical Specifications

ManufacturerSTMicroelectronics
MountingTHT
Power dissipation110W
Polarisationunipolar
Kind of channelenhancement
Drain-source voltage60V
Type of transistorN-MOSFET
Gate-source voltage±20V
Kind of packagetube
CaseTO220-3
On-state resistance18mΩ
Drain current35A
tariffCode85412900
Channel TypeN Channel
euEccnNLR
rohsCompliantY-EX
hazardousfalse
rohsPhthalatesCompliantYES
Rds(on) Test Voltage10
Drain Source On State Resistance0.018
Continuous Drain Current Id50
isCanonicalY
Operating Temperature Max175
Transistor MountingThrough Hole
Gate Source Threshold Voltage Max3
SVHCLead (21-Jan-2025)
Drain Source Voltage Vds60
Transistor Case StyleTO-220
productTraceabilityYes-Date/Lot Code
No. of Pins3
usEccnEAR99

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