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STP55NF06FP

ActiveTO220FP

STMicroelectronics · Transistors

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Technical Specifications

ManufacturerSTMicroelectronics
MountingTHT
Power dissipation30W
Polarisationunipolar
VersionESD
TechnologySTripFET™ II
Drain current35A
Kind of channelenhancement
Drain-source voltage60V
Type of transistorN-MOSFET
Gate-source voltage±20V
Kind of packagetube
CaseTO220FP
On-state resistance18mΩ
tariffCode85412900
Channel TypeN Channel
euEccnNLR
rohsCompliantYES
hazardousfalse
rohsPhthalatesCompliantYES
Rds(on) Test Voltage10
Drain Source On State Resistance0.018
Continuous Drain Current Id50
isCanonicalY
Operating Temperature Max175
Transistor MountingThrough Hole
Gate Source Threshold Voltage Max3
SVHCNo SVHC (25-Jun-2025)
Drain Source Voltage Vds60
Transistor Case StyleTO-220FP
productTraceabilityNo
No. of Pins3
usEccnEAR99

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