2N7002NXBKR
ActiveSOT23, TO236ABNexperia · Transistors
Transistor: N-MOSFET; Trench; unipolar; 60V; 0.17A; Idm: 0.9A; 0.31W
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2N7002NXBKR
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Technical Specifications
ManufacturerNEXPERIA
TechnologyTrench
MountingSMD
CaseSOT23, TO236AB
Kind of packagereel, tape
Pulsed drain current0.9A
Power dissipation0.31W
Gate charge1nC
Polarisationunipolar
VersionESD
Drain current0.17A
Kind of channelenhancement
Drain-source voltage60V
Type of transistorN-MOSFET
Gate-source voltage±20V
On-state resistance5.7Ω
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