2N7002,215
ActiveSOT23, TO236ABNexperia · Transistors
Transistor: N-MOSFET; Trench; unipolar; 60V; 0.19A; Idm: 1.2A; 830mW
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Technical Specifications
ManufacturerNEXPERIA
MountingSMD
Polarisationunipolar
TechnologyTrench
Kind of channelenhancement
Type of transistorN-MOSFET
Kind of packagereel, tape
CaseSOT23, TO236AB
On-state resistance5Ω
Pulsed drain current1.2A
Drain-source voltage60V
Power dissipation0.83W
Drain current0.19A
Gate-source voltage±30V
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