IRF540ZPBF
AktifTO220ABInfineon Technologies · Transistörler
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Teknik Özellikler
MountingTHT
Power dissipation92W
Gate charge42nC
Polarisationunipolar
TechnologyHEXFET®
Drain current36A
Kind of channelenhancement
Drain-source voltage100V
Type of transistorN-MOSFET
Gate-source voltage±20V
CaseTO220AB
ManufacturerINFINEON TECHNOLOGIES
Kind of packagetube
On-state resistance26.5mΩ
tariffCode85412900
Channel TypeN Channel
euEccnNLR
rohsCompliantYES
hazardousfalse
rohsPhthalatesCompliantYES
Rds(on) Test Voltage10
Drain Source On State Resistance0.0265
Continuous Drain Current Id36
isCanonicalY
Operating Temperature Max175
Transistor MountingThrough Hole
Gate Source Threshold Voltage Max4
SVHCNo SVHC (25-Jun-2025)
Drain Source Voltage Vds100
Transistor Case StyleTO-220AB
productTraceabilityYes-Date/Lot Code
No. of Pins3
usEccnEAR99
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