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2N7002DWH6327XTSA1

AktifPG-SOT-363

Infineon Technologies · Transistörler

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Teknik Özellikler

ManufacturerINFINEON TECHNOLOGIES
MountingSMD
Polarisationunipolar
TechnologyOptiMOS™
Kind of channelenhancement
Type of transistorN-MOSFET x2
CasePG-SOT-363
Drain-source voltage60V
Drain current0.3A
Gate-source voltage±20V
Power dissipation0.5W
On-state resistance
tariffCode85412100
Channel TypeN Channel
euEccnNLR
Drain Source On State Resistance P Channel1.6
rohsCompliantYES
Drain Source On State Resistance N Channel1.6
hazardousfalse
rohsPhthalatesCompliantYES
isCanonicalY
Operating Temperature Max150
MSLMSL 1 - Unlimited
Continuous Drain Current Id P Channel300
Drain Source Voltage Vds P Channel60
Continuous Drain Current Id N Channel300
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Drain Source Voltage Vds N Channel60
Power Dissipation P Channel500
Transistor Case StyleSOT-363
productTraceabilityYes-Date/Lot Code
No. of Pins6
usEccnEAR99
Power Dissipation N Channel500

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