IRFP260NPBF
AktifTO247ACInfineon Technologies · Transistörler
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Teknik Özellikler
Drain-source voltage200V
ManufacturerINFINEON TECHNOLOGIES
MountingTHT
Polarisationunipolar
TechnologyHEXFET®
Kind of channelenhancement
Type of transistorN-MOSFET
Kind of packagetube
CaseTO247AC
Drain current35A
Power dissipation300W
Gate charge234nC
On-state resistance40mΩ
Gate-source voltage±20V
tariffCode85412900
Channel TypeN Channel
euEccnNLR
rohsCompliantYES
Product RangeHEXFET Series
hazardousfalse
rohsPhthalatesCompliantYES
Rds(on) Test Voltage10
Drain Source On State Resistance0.04
Continuous Drain Current Id50
isCanonicalY
Operating Temperature Max175
Transistor MountingThrough Hole
Gate Source Threshold Voltage Max4
SVHCNo SVHC (25-Jun-2025)
Drain Source Voltage Vds200
Transistor Case StyleTO-247AC
productTraceabilityNo
No. of Pins3
usEccnEAR99
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