IRF3710PBF
AktifTO220ABInfineon Technologies · Transistörler
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Teknik Özellikler
ManufacturerINFINEON TECHNOLOGIES
MountingTHT
Polarisationunipolar
TechnologyHEXFET®
Kind of channelenhancement
Type of transistorN-MOSFET
CaseTO220AB
Drain-source voltage100V
Gate-source voltage±20V
Drain current57A
On-state resistance23mΩ
Gate charge86.7nC
Power dissipation200W
Kind of packagetube
tariffCode85412900
Channel TypeN Channel
euEccnNLR
rohsCompliantYES
hazardousfalse
rohsPhthalatesCompliantYES
Rds(on) Test Voltage10
Drain Source On State Resistance0.023
Continuous Drain Current Id46
isCanonicalY
Operating Temperature Max175
Transistor MountingThrough Hole
Gate Source Threshold Voltage Max4
SVHCNo SVHC (25-Jun-2025)
Drain Source Voltage Vds100
Transistor Case StyleTO-220AB
productTraceabilityYes-Date/Lot Code
No. of Pins3
usEccnEAR99
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