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BSS123W — Yangjie Technology

BSS123W

ActiveSOT323

Yangjie Technology · Transistors

Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.2W

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BSS123W
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Technical Specifications

TechnologyTRENCH POWER MV
ManufacturerYANGJIE TECHNOLOGY
Power dissipation0.35W
MountingSMD
CaseSOT323
Kind of packagereel, tape
Pulsed drain current0.8A
Gate charge2.5nC
Polarisationunipolar
Drain current0.16A
Kind of channelenhancement
Drain-source voltage100V
Type of transistorN-MOSFET
Gate-source voltage±20V
On-state resistance5.5Ω

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