SI4800BDY-T1-GE3
ActiveSO8Vishay · Transistors
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Technical Specifications
ManufacturerVISHAY
CaseSO8
MountingSMD
Pulsed drain current40A
Power dissipation2.5W
Gate charge13nC
Polarisationunipolar
TechnologyTrenchFET®
Drain current7A
Kind of channelenhancement
Drain-source voltage30V
Type of transistorN-MOSFET
Gate-source voltage±25V
Kind of packagereel, tape
On-state resistance30mΩ
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