SI2302CDS-T1-E3
ActiveSOT23Vishay · Transistors
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Technical Specifications
ManufacturerVISHAY
MountingSMD
Pulsed drain current10A
Power dissipation0.86W
Gate charge3.5nC
Polarisationunipolar
TechnologyTrenchFET®
Drain current2.1A
Kind of channelenhancement
Type of transistorN-MOSFET
Gate-source voltage±8V
CaseSOT23
On-state resistance57mΩ
Drain-source voltage20V
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