TN5325K1-G
ActiveSOT23-3Microchip Technology · Transistors
Transistor: N-MOSFET; unipolar; 250V; 150mA; Idm: 0.4A; 360mW
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TN5325K1-G
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Technical Specifications
ManufacturerMICROCHIP TECHNOLOGY
CaseSOT23-3
MountingSMD
Kind of packagereel, tape
Manufacturer standard package3000pcs.
Pulsed drain current0.4A
Power dissipation0.36W
Polarisationunipolar
Drain current0.15A
Kind of channelenhancement
Drain-source voltage250V
Type of transistorN-MOSFET
Gate-source voltage±20V
On-state resistance7Ω
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