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IRFL024NTRPBF

ActiveSOT223

Infineon Technologies · Transistors

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Technical Specifications

ManufacturerINFINEON TECHNOLOGIES
MountingSMD
Polarisationunipolar
TechnologyHEXFET®
Drain current4A
Kind of channelenhancement
Drain-source voltage55V
Type of transistorN-MOSFET
Kind of packagereel
CaseSOT223
Power dissipation2.1W
tariffCode85412900
Channel TypeN Channel
euEccnNLR
rohsCompliantYES
hazardousfalse
rohsPhthalatesCompliantYES
Rds(on) Test Voltage10
Drain Source On State Resistance0.075
Continuous Drain Current Id2.8
isCanonicalN
Operating Temperature Max150
Transistor MountingSurface Mount
MSLMSL 1 - Unlimited
Gate Source Threshold Voltage Max4
SVHCNo SVHC (21-Jan-2025)
Drain Source Voltage Vds55
Transistor Case StyleSOT-223
productTraceabilityYes-Date/Lot Code
No. of Pins3
usEccnEAR99

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