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AUIRF4905

ActiveTO220AB

Infineon Technologies · Transistors

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Technical Specifications

ManufacturerINFINEON TECHNOLOGIES
Power dissipation200W
Gate charge0.12µC
Polarisationunipolar
TechnologyHEXFET®
Drain current-52A
Kind of channelenhancement
Drain-source voltage-55V
Type of transistorP-MOSFET
Gate-source voltage±20V
Kind of packagetube
CaseTO220AB
On-state resistance65mΩ
MountingTHT
tariffCode85412900
Channel TypeP Channel
euEccnNLR
rohsCompliantYES
hazardousfalse
rohsPhthalatesCompliantYES
Rds(on) Test Voltage10
Drain Source On State Resistance0.02
Continuous Drain Current Id74
isCanonicalY
Operating Temperature Max175
Transistor MountingThrough Hole
Gate Source Threshold Voltage Max2
QualificationAEC-Q101
Drain Source Voltage Vds55
Transistor Case StyleTO-220AB
productTraceabilityYes-Date/Lot Code
No. of Pins3
usEccnEAR99

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