DMWSH120H28SM4Q
ActiveTO247-4Diodes Incorporated · Transistors
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70.8A; Idm: 430A; 214W
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DMWSH120H28SM4Q
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Technical Specifications
ManufacturerDIODES INCORPORATED
MountingTHT
CaseTO247-4
On-state resistance28.5mΩ
Kind of packagetube
Pulsed drain current430A
Power dissipation214W
Gate charge173.7nC
Polarisationunipolar
TechnologySiC
Features of semiconductor devicesKelvin terminal
Drain current70.8A
Kind of channelenhancement
Drain-source voltage1.2kV
Type of transistorN-MOSFET
Gate-source voltage-4...15V
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