What Is FRAM?
FRAM (Ferroelectric RAM) is a special memory type that can write as fast as RAM but keeps data persistently like ROM. It combines the advantages of both worlds.
How Does It Work?
It stores data not as charge but in the persistent polarization direction of a ferroelectric material. This structure allows both fast writing and preserving data when power is lost.
Advantage Over Flash and EEPROM
Flash and EEPROM are slow when writing and have limited cycles. FRAM writes at RAM speed, consumes very little power and withstands billions of write cycles.
| Property | FRAM | EEPROM/Flash |
|---|---|---|
| Write speed | Very fast | Slow |
| Write endurance | Very high | Limited |
| Power | Very low | Higher |
Disadvantage
FRAM's capacity is small compared to Flash and its per-unit cost is high. So instead of large data storage, it's preferred for frequently-written critical small data.
Where Is It Used?
Smart meters, data loggers, medical devices, low-power IoT sensors and frequently-written setting/counter data.
Why Is It Ideal in Data Loggers?
Data loggers write measurements very frequently and continuously. While Flash's limited write endurance is quickly exhausted in this scenario, FRAM's billions-of-cycles endurance and RAM-speed writing ensure the data is stored safely even during a sudden power loss.
Common Mistakes
- Expecting large storage: FRAM has small capacity, not suited to bulk storage.
- Ignoring cost: it's more expensive per unit than Flash.
- Wrong application: its advantage shows in frequent writing and low power.
Frequently Asked Questions
Why does FRAM write fast?+
Is FRAM volatile?+
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