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AktifTO220ABInfineon Technologies · Transistörler
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Teknik Özellikler
CaseTO220AB
MountingTHT
Kind of packagetube
Type of transistorN-MOSFET
On-state resistance3.3mΩ
Power dissipation370W
Gate charge160nC
Polarisationunipolar
TechnologyHEXFET®
Drain current210A
Kind of channelenhancement
Drain-source voltage75V
Gate-source voltage±20V
ManufacturerINFINEON TECHNOLOGIES
tariffCode85412900
Channel TypeN Channel
euEccnNLR
rohsCompliantYES
hazardousfalse
rohsPhthalatesCompliantYES
Rds(on) Test Voltage10
Drain Source On State Resistance3300
Continuous Drain Current Id210
isCanonicalY
Operating Temperature Max175
Transistor MountingThrough Hole
Gate Source Threshold Voltage Max4
SVHCNo SVHC (25-Jun-2025)
Drain Source Voltage Vds75
Transistor Case StyleTO-220AB
productTraceabilityYes-Date/Lot Code
No. of Pins3
usEccnEAR99
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