IRF540NPBF
AktifTO220ABInfineon Technologies · Transistörler
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Teknik Özellikler
ManufacturerINFINEON TECHNOLOGIES
MountingTHT
Power dissipation140W
Gate charge47.3nC
Polarisationunipolar
TechnologyHEXFET®
Drain current33A
Kind of channelenhancement
Drain-source voltage100V
Type of transistorN-MOSFET
Gate-source voltage±20V
Kind of packagetube
CaseTO220AB
On-state resistance44mΩ
tariffCode85412900
Channel TypeN Channel
euEccnNLR
rohsCompliantYES
Product RangeHEXFET Series
hazardousfalse
rohsPhthalatesCompliantYES
Rds(on) Test Voltage10
Drain Source On State Resistance0.044
Continuous Drain Current Id33
isCanonicalY
Operating Temperature Max175
Transistor MountingThrough Hole
Gate Source Threshold Voltage Max4
SVHCNo SVHC (25-Jun-2025)
Drain Source Voltage Vds100
Transistor Case StyleTO-220AB
productTraceabilityNo
No. of Pins3
usEccnEAR99
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